Understanding and Manipulating the Interplay of Wide-Energy-Gap Host and TADF Sensitizer in High-Performance Fluorescence OLEDs.

Comprising an emitting layer (EML) constituting a wide-energy-gap host, a thermally activated delayed fluorescence (TADF) sensitizer and a conventional fluorescent dopant, TADF-sensitizing-fluorescence organic light-emitting diodes (TSF-OLEDs) highly depend on component interplay to maximize their performance, which, however, is still under-researched. Taking the host type (TADF or non-TADF) and the recombination position (on the host or on the TADF sensitizer) into consideration, the interplay of host and TADF sensitizer is comprehensively studied and manipulated. A wide-energy-gap host with TADF and recombination of charges on it are both required to maximize device performances by triggering multiple sensitizing processes to eliminate exciton losses. Based on those findings, a maximum external quantum efficiency (EQE)/power efficiency (PE) of 23.2%/76.9 lm W is realized with a newly developed TADF host, significantly outperforming the reference devices. Further device optimization leads to unprecedently high EQE/PE of 24.2%/89.5 lm W and a half-lifetime of over 400 h at an initial luminance of 2000 cd m , with the peak PE being the highest value among the reported TSF-OLEDs. This work reveals the importance of manipulating the component interplay in EMLs, opening a new avenue toward highly efficient TSF-OLEDs.