use of the thermal chemical vapor deposition to fabricate light-emitting diodes based on zno nanowire/p-gan heterojunction
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ID: 227640
2011
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Abstract
The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.
| Reference Key |
chang2011journaluse
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|---|---|
| Authors | ;Sheng-Po Chang;Ting-Hao Chang |
| Journal | reproductive biology and endocrinology |
| Year | 2011 |
| DOI |
10.1155/2011/903176
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| URL | |
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