physics-based modeling and experimental study of si-doped inas/gaas quantum dot solar cells
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ID: 211997
2018
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Abstract
This paper presents an experimental and theoretical study on the impact of doping and recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system. Numerical simulations are built on a hybrid approach that includes the quantum features of the charge transfer processes between the nanostructured material and the bulk host material in a classical transport model of the macroscopic continuum. This allows gaining a detailed understanding of the several physical mechanisms affecting the photovoltaic conversion efficiency and provides a quantitatively accurate picture of real devices at a reasonable computational cost. Experimental results demonstrate that QD doping provides a remarkable increase of the solar cell open-circuit voltage, which is explained by the numerical simulations as the result of reduced recombination loss through quantum dots and defects.
| Reference Key |
cdola2018internationalphysics-based
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|---|---|
| Authors | ;A. P. Cédola;D. Kim;A. Tibaldi;M. Tang;A. Khalili;J. Wu;H. Liu;F. Cappelluti |
| Journal | construction and building materials |
| Year | 2018 |
| DOI |
10.1155/2018/7215843
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| URL | |
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