nonstoichiometry in tio2−y studied by ion beam methods and photoelectron spectroscopy
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ID: 201858
2012
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Abstract
This paper treats a problem of nonstoichiometry in TiO2−y thin films deposited by reactive sputtering at controlled sputtering rates. Ion beam techniques, Rutherford backscattering (RBS), and nuclear reaction analysis (NRA) along with X-ray photoelectron spectroscopy have been applied to determine a deviation from stoichiometry y in the bulk and at the surface of TiO2−y layers. The critical review of these experimental methods is given. Defect structure responsible for the electrical resistivity of rutile TiO2 is discussed.
| Reference Key |
zakrzewska2012advancesnonstoichiometry
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|---|---|
| Authors | ;K. Zakrzewska |
| Journal | bulletin of the korean chemical society |
| Year | 2012 |
| DOI |
10.1155/2012/826873
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| URL | |
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