study of high quality indium nitride films grown on si(100) substrate by rf-mombe with gzo and aln buffer layers
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ID: 197740
2012
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Abstract
Wurtzite structure InN films were prepared on Si(100) substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE) system. Ga-doped ZnO (GZO) and Amorphous AlN (a-AlN) film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL). XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.
| Reference Key |
chen2012journalstudy
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| Authors | ;Wei-Chun Chen;Shou-Yi Kuo |
| Journal | reproductive biology and endocrinology |
| Year | 2012 |
| DOI |
10.1155/2012/853021
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