fabrication of a cu(inga)se2 thin film photovoltaic absorber by rapid thermal annealing of cuga/in precursors coated with a se layer
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ID: 192473
2013
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Abstract
Cu(InGa)Se2 (CIGS) thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA), by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2) plane. A Cu-poor precursor with a Cu/() ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/() ratio of 1.15 exhibits an inappropriate second phase () in the absorber. However, the precursor with a Cu/() ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.
| Reference Key |
hsu2013internationalfabrication
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| Authors | ;Chun-Yao Hsu;Peng-Cheng Huang;Yu-Yao Chen;Dong-Cherng Wen |
| Journal | construction and building materials |
| Year | 2013 |
| DOI |
10.1155/2013/132105
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