comparison of h2 and nh3 treatments for copper interconnects

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ID: 182104
2013
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Abstract
The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The experimental results show that H2 plasma treatment has excellent Cu oxide removal efficiency, less impact on the formation of Cu hillocks, and less damage on low-dielectric constant (low-k) dielectrics in comparison to NH3 plasma treatment. However, H2 plasma treatment results in a higher leakage current between the Cu lines and shorter electromigration (EM) failure time due to a weaker adhesion strength at the Cu film interface. On the other hand, NH3 plasma treatment without the sufficient treatment time would lead to an increased probability of delamination at the Cu/barrier layer interface since the Cu oxide layer can not be completely removed. As a result, extending NH3 plasma treatment time can efficiently reduce the adhesion failure and enlarge EM resistance as well.
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chang2013advancescomparison Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Yu-Min Chang;Jihperng Leu;Bing-Hong Lin;Ying-Lung Wang;Yi-Lung Cheng
Journal bulletin of the korean chemical society
Year 2013
DOI
10.1155/2013/825195
URL
http://dx.doi.org/10.1155/2013/825195
Keywords
materials of engineering and construction mechanics of materials

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