Nitrogen cluster doping for high-mobility/conductivity graphene films with millimeter-sized domains.

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ID: 17500
2019
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Abstract
Directly incorporating heteroatoms into the hexagonal lattice of graphene during growth has been widely used to tune its electrical properties with superior doping stability, uniformity, and scalability. However the introduction of scattering centers limits this technique because of reduced carrier mobilities and conductivities of the resulting material. Here, we demonstrate a rapid growth of graphitic nitrogen cluster-doped monolayer graphene single crystals on Cu foil with remarkable carrier mobility of 13,000 cm V s and a greatly reduced sheet resistance of only 130 ohms square. The exceedingly large carrier mobility with high n-doping level was realized by (i) incorporation of nitrogen-terminated carbon clusters to suppress the carrier scattering and (ii) elimination of all defective pyridinic nitrogen centers by oxygen etching. Our study opens up an avenue for the growth of high-mobility/conductivity doped graphene with tunable work functions for scalable graphene-based electronic and device applications.
Reference Key
lin2019nitrogenscience Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lin, Li;Li, Jiayu;Yuan, Qinghong;Li, Qiucheng;Zhang, Jincan;Sun, Luzhao;Rui, Dingran;Chen, Zhaolong;Jia, Kaicheng;Wang, Mingzhan;Zhang, Yanfeng;Rummeli, Mark H;Kang, Ning;Xu, H Q;Ding, Feng;Peng, Hailin;Liu, Zhongfan;
Journal Science advances
Year 2019
DOI
10.1126/sciadv.aaw8337
URL
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