high-speed and efficient silicon modulator based on forward-biased pin diodes

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ID: 169423
2014
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Abstract
Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.
Reference Key
eakiyama2014frontiershigh-speed Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Suguru eAkiyama;Tatsuya eUsuki
Journal journal of biomaterials science polymer edition
Year 2014
DOI
10.3389/fphy.2014.00065
URL
http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00065/full
Keywords
diodes silicon photonics

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