electronic structure of ag8ges6

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ID: 163396
2017
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Abstract
For the first time, the energy band structure, total and partial densities of states of Ag8GeS6 crystal were calculated using the ab initio density functional method in LDA and LDA+U approximations. Argyrodite is direct-gap semiconductor with the calculated band gap width Egd = 1.46 eV in the LDA+U approximation. The valence band of argyrodite contains four energy separated groups of occupied subzones. The unique feature of electron-energy structure of Ag8GeS6 crystal is the energy overlapping between the occupied d-states of Ag atoms and the delocalized valence p-states of S atoms in relatively close proximity to the valence band top.
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bletskan2017semiconductorelectronic Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;D.I. Bletskan;I.P. Studenyak;V.V. Vakulchak;A.V. Lukach
Journal journal of chromatography a
Year 2017
DOI
10.15407/spqeo20.01.019
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