investigation on silicon solar cell capacitance and its dependence on both temperature and incidence angle
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ID: 157977
2014
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Abstract
The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell capacitance.
| Reference Key |
san2014advancesinvestigation
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|---|---|
| Authors | ;Moustapha Sané |
| Journal | electrochemistry communications |
| Year | 2014 |
| DOI |
10.12913/22998624/559
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