effect of passivation on microwave power performances of algan/gan/si hemts

Clicks: 168
ID: 157441
2014
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #42 of 60 articles by views in gülhane tıp dergi

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Abstract
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft) and maximum power gain (fmax) was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.
Reference Key
mosbahi2014sensorseffect Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ; H. MOSBAHI;M. CHARFEDDINE;M. GASSOUMI;H. MEJRI;C. GAQUIÈRE;B. GRIMBERT;M. A. ZAIDI;H. MAAREF
Journal gülhane tıp dergi
Year 2014
DOI
DOI not found
URL
Keywords

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

No comments yet. Be the first to comment on this article.