a current transport mechanism on the surface of pd-sio2 mixture for metal-semiconductor-metal gaas diodes

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ID: 151032
2013
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Abstract
This paper presents a current transport mechanism of Pd metal-semiconductor-metal (MSM) GaAs diodes with a Schottky contact material formed by intentionally mixing SiO2 into a Pd metal. The Schottky emission process, where the thermionic emission both over the metal-semiconductor barrier and over the insulator-semiconductor barrier is considered on the carrier transport of a mixed contact of Pd and SiO2 (MMO) MSM diodes, is analyzed. The image-force lowering is accounted for. In addition, with the applied voltage increased, the carrier recombination is thus considered. The simulation data are presented to explain the experimental results clearly.
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tan2013advancesa Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Shih-Wei Tan;Shih-Wen Lai
Journal bulletin of the korean chemical society
Year 2013
DOI
10.1155/2013/531573
URL
http://dx.doi.org/10.1155/2013/531573
Keywords
materials of engineering and construction mechanics of materials

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