enhancing thermoelectric properties of si80ge20 alloys utilizing the decomposition of nabh4 in the spark plasma sintering process
Clicks: 299
ID: 148149
2015
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Popular Article
30.0
/100
299 views
20 readers
AI Quality Assessment
Not analyzed
Readership in this journal
PopularRanked #44 of 526 articles by views in acs combinatorial science
Most read
Least read
Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 526 in total.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
The thermoelectric properties of spark plasma sintered, ball-milled, p-type Si80Ge20-(NaBH4)x (x = 0.7,1.7 and 2.7), and Si80Ge20B1.7-y-(NaBH4)y (y = 0.2 and 0.7) samples have been investigated from 30 K to 1100 K. These samples were prepared by spark plasma sintering of an admixture of Si, Ge, B and NaBH4 powders. In particular, the degasing process during the spark plasma sintering process, the combined results of X-ray powder diffraction, Raman spectroscopy, Hall coefficient, electrical resistivity, and Seebeck coefficient measurements indicated that NaBH4 decomposed into Na, B, Na2B29, and H2 during the spark plasma sintering process; Na and B were doped into the SiGe lattice, resulting in favorable changes in the carrier concentration and the power factor. In addition, the ball milling process and the formation of Na2B29 nanoparticles resulted in stronger grain boundary scattering of heat-carrying phonons, leading to a reduced lattice thermal conductivity. As a result, a significant improvement in the figure of merit ZT (60%) was attained in p-type Si80Ge20-(NaBH4)1.7 and Si80Ge20-B1.5(NaBH4)0.7 at 1100 K as compared to the p-type B-doped Si80Ge20 material used in the NASA’s radioactive thermoelectric generators. This single-step “doping-nanostructuring” procedure can possibly be applied to other thermoelectric materials.
| Reference Key |
lahwal2015energiesenhancing
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | ;Ali Lahwal;Xiaoyu Zeng;Sriparna Bhattacharya;Menghan Zhou;Dale Hitchcock;Mehmet Karakaya;Jian He;Apparao M. Rao;Terry M. Tritt |
| Journal | acs combinatorial science |
| Year | 2015 |
| DOI |
10.3390/en81010958
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.