high performance seesaw torsional cmos-mems relay using tungsten via layer

Clicks: 213
ID: 147841
2018
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Abstract
In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm CMOS technology. Three different contact materials are studied to discriminate which is the most adequate as a mechanical relay. The robustness of the relay is proved, and its main characteristics as a relay for the three different contact interfaces are provided. The seesaw relay is capable of a double hysteretic switching cycle, providing compactness for mechanical logic processing. The low contact resistance achieved with the TiN/W mechanical contact with high cycling life time is competitive in comparison with the state-of-the art.
Reference Key
riverola2018micromachineshigh Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Martín Riverola;Francesc Torres;Arantxa Uranga;Núria Barniol
Journal chemistryopen
Year 2018
DOI
10.3390/mi9110579
URL
https://www.mdpi.com/2072-666X/9/11/579
Keywords Keywords not found

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