computational study of diffusivities in diamond ge-si alloys

Clicks: 181
ID: 144581
2012
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Abstract
A variety of diffusivities in Ge-Si alloys available in the literature were critically reviewed. On the basis of the critically reviewed literature data, the diffusion parameters for self diffusivities and impurity diffusivities in diamond Ge-Si alloys were determined by considering the diffusion mechanism. A phenomenological treatment of the diffusivities in Ge-Si alloys were conducted. The finally obtained atomic mobilities can reproduce most of the diffusivities in diamond Ge-Si alloys as well as the concentration profiles of Ge-Si binary diffusion couples. In addition, the Manning modification on Darken Equation in diamond structure was also tested by using the presently obtained atomic mobilities.
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s.l.2012journalcomputational Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Cui S.L.;Zhang L.J.;Zhang W.B.;Du Y.;Xu H.H.
Journal computational statistics
Year 2012
DOI
10.2298/JMMB111102021C
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