computational study of diffusivities in diamond ge-si alloys
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ID: 144581
2012
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Abstract
A variety of diffusivities in Ge-Si alloys available in the literature were critically reviewed. On the basis of the critically reviewed literature data, the diffusion parameters for self diffusivities and impurity diffusivities in diamond Ge-Si alloys were determined by considering the diffusion mechanism. A phenomenological treatment of the diffusivities in Ge-Si alloys were conducted. The finally obtained atomic mobilities can reproduce most of the diffusivities in diamond Ge-Si alloys as well as the concentration profiles of Ge-Si binary diffusion couples. In addition, the Manning modification on Darken Equation in diamond structure was also tested by using the presently obtained atomic mobilities.
| Reference Key |
s.l.2012journalcomputational
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|---|---|
| Authors | ;Cui S.L.;Zhang L.J.;Zhang W.B.;Du Y.;Xu H.H. |
| Journal | computational statistics |
| Year | 2012 |
| DOI |
10.2298/JMMB111102021C
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| URL | |
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