Topotactic Phase Transition Driving Memristive Behavior.

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ID: 14412
2019
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Abstract
Redox-based memristive devices are one of the most attractive candidates for future nonvolatile memory applications and neuromorphic circuits, and their performance is determined by redox processes and the corresponding oxygen-ion dynamics. In this regard, brownmillerite SrFeO has been recently introduced as a novel material platform due to its exceptional oxygen-ion transport properties for resistive-switching memory devices. However, the underlying redox processes that give rise to resistive switching remain poorly understood. By using X-ray absorption spectromicroscopy, it is demonstrated that the reversible redox-based topotactic phase transition between the insulating brownmillerite phase, SrFeO , and the conductive perovskite phase, SrFeO , gives rise to the resistive-switching properties of SrFeO memristive devices. Furthermore, it is found that the electric-field-induced phase transition spreads over a large area in (001) oriented SrFeO devices, where oxygen vacancy channels are ordered along the in-plane direction of the device. In contrast, (111)-grown SrFeO devices with out-of-plane oriented oxygen vacancy channels, reaching from the bottom to the top electrode, show a localized phase transition. These findings provide detailed insight into the resistive-switching mechanism in SrFeO -based memristive devices within the framework of metal-insulator topotactic phase transitions.
Reference Key
nallagatla2019topotacticadvanced Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Nallagatla, Venkata R;Heisig, Thomas;Baeumer, Christoph;Feyer, Vitaliy;Jugovac, Matteo;Zamborlini, Giovanni;Schneider, Claus M;Waser, Rainer;Kim, Miyoung;Jung, Chang Uk;Dittmann, Regina;
Journal advanced materials (deerfield beach, fla)
Year 2019
DOI
10.1002/adma.201903391
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