tuning the charge states in inas/gasb or inas/gainsb composite quantum wells by persistent photoconductivity

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ID: 143922
2017
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Abstract
We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs).
Reference Key
tong2017aiptuning Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Bingbing Tong;Zhongdong Han;Tingxin Li;Chi Zhang;Gerard Sullivan;Rui-Rui Du
Journal journal of hydrology: x
Year 2017
DOI
10.1063/1.4993894
URL
http://dx.doi.org/10.1063/1.4993894
Keywords
physics

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