high frequency ingaas mosfet with nitride sidewall design for low power application
Clicks: 198
ID: 139948
2017
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Steady Performance
30.0
/100
198 views
32 readers
AI Quality Assessment
Not analyzed
Readership in this journal
SteadyRanked #70 of 205 articles by views in BMC infectious diseases
Most read
Least read
Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 205 in total.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
InxGa1-xAs devices have been widely researched for low power high frequency applications due to the outstanding electron mobility and small bandgap of the materials. Regrown source/drain technology is highly appreciated in InGaAs MOSFET, since it is able to reduce the thermal budget induced by ion implantation, as well as reduce the source/drain resistance. However, regrown source/drain technology has problems such as high parasitic capacitance and high electric field at gate edge towards the drain side, which will lead to large drain leakage current and compromise the frequency performance. To alleviate the drain leakage current problem for low power applications and to improve the high frequency performance, a novel Si3N4 sidewall structure was introduced to the InGaAs MOSFET. Device simulation was carried out with different newly proposed sidewall designs. The results showed that both the drain leakage current and the source/drain parasitic capacitance were reduced by applying Si3N4 sidewall together with InP extended layer in InGaAs MOSFET. The simulation results also suggested that the newly created “recessed” sidewall was able to bring about the most frequency favorable characteristic with no current sacrifice.
| Reference Key |
mo2017journalhigh
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | ;Jiongjiong Mo;Hua Chen;Zhiyu Wang;Faxin Yu |
| Journal | BMC infectious diseases |
| Year | 2017 |
| DOI |
10.1155/2017/4078240
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.