local mapping of interface traps using contactless capacitance transient technique
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ID: 132901
2016
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Abstract
Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a conventional Metal-Oxide-Semiconductor (MOS) structure. The local mapping of interface traps was obtained by using a contactless Isothermal Capacitance Transient Spectroscopy (ICTS), which is one of the contactless capacitance transient techniques. The validity of the contactless ICTS was demonstrated by characterizing a partially Au-doped Si wafer. The results revealed that local mapping of interface traps using contactless capacitance transient techniques is effective in wafer inspection and is a promising technique for the development of MOS devices and solar cells with high reliability and high performance.
| Reference Key |
yoshida2016aiplocal
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|---|---|
| Authors | ;Haruhiko Yoshida;Hidenobu Mori |
| Journal | journal of hydrology: x |
| Year | 2016 |
| DOI |
10.1063/1.4964700
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| URL | |
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