design of a novel w-sinker rf ldmos
Clicks: 4
ID: 131984
2015
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Steady Performance
0.9
/100
4 views
3 readers
AI Quality Assessment
Not analyzed
Readership in this journal
SteadyRanked #55 of 56 articles by views in majallah-i ̒ulum-i bāghbānī
Most read
Least read
Bar heights use a square-root scale.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% and improve power density. Furthermore, the W-sinker structure reduces the parasitic resistance and inductance and improves thermal conductivity of the device as well. Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is well established. An F+A power amplifier product with frequency range of 1.8–2.1 GHz is developed for the application of 4G LTE base station and industry leading performance is achieved. The qualification results show that the device reliability and ruggedness can also meet requirement of the application.
| Reference Key |
xu2015advancesdesign
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | ;Xiangming Xu;Han Yu;Jingfeng Huang;Chun Wang;Wei Ji;Zhengliang Zhou;Ying Cai;Yong Wang;Pingliang Li;Peng-Fei Wang;David Wei Zhang |
| Journal | majallah-i ̒ulum-i bāghbānī |
| Year | 2015 |
| DOI |
10.1155/2015/312646
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.