HgTe Nanocrystals for SWIR Detection and their Integration up to Focal Plane Array.

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ID: 12344
2019
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Abstract
Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the shortwave infrared (SWIR, λ<1.7 µm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for wider bap gap such as the one made for solar cells, while HgTe takes advantage of development relative to mid wave infrared detector. Here we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multi pixel devices to quantize spatial homogeneity and onto read out circuits to obtain fast and sensitive infrared laser beam profile.
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chu2019hgteacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Chu, Audrey;Martinez, Bertille;Ferr Eacute, Simon;Noguier, Vincent;Greboval, Charlie;Livache, Clément;Qu, Junling;Prado, Yoann;Casaretto, Nicolas;Goubet, Nicolas;Cruguel, Hervé;Dudy, Lenart;Silly, Mathieu G;Vincent, Gregory;Lhuillier, Emmanuel;
Journal ACS applied materials & interfaces
Year 2019
DOI
10.1021/acsami.9b09954
URL
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