Is it possible to develop complex S-Se graded band gap profiles in kesterite-based solar cells?

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ID: 12343
2019
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Abstract
This work presents the development of a novel chalcogenisation process for the fabrication of CuZnSn(S,Se) (CZTSSe or kesterite) based solar cells that enables generating sharp graded anionic compositional profiles with high S content at the top and low S content at the bottom. This is achieved though the optimization of the annealing parameters including the study of several sulphur sources with different predicted reactivity (elemental S, thiourea, SnS and SeS). As a result, depending on the sulphur source employed, devices with superficially localized maximum sulphur content between 50-20 % within the charge depletion zone, and between 10-30 % towards the bulk material are obtained. This complex graded structure is confirmed and characterized by combining multi-wavelength depth-resolved Raman spectroscopy measurements together with in-depth Auger Electron Spectroscopy (AES) and X-Ray Fluorescence (XRF). In addition, the devices fabricated with such graded-band gap absorbers are shown to be fully functional with conversion efficiencies around 9 % and with improved V deficit values that correlate with the presence of a gradient. These results represent one step forward towards anionic band gap grading in kesterite solar cells.
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andradearvizu2019isacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Andrade-Arvizu, Jacob;Izquierdo-Roca, Victor;Becerril Romero, Ignacio;Vidal-Fuentes, Pedro;Fonoll-Rubio, Robert;Sánchez, Yudania;Placidi, Marcel;Calvo-Barrio, Lorenzo;Vigil-Galán, Osvaldo;Saucedo, Edgardo;
Journal ACS applied materials & interfaces
Year 2019
DOI
10.1021/acsami.9b09813
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