Microstructure and thermoelectric properties of In 2 O 3 /ITO thin film thermocouples with Al 2 O 3 protecting layer

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ID: 118858
2018
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Abstract
In2O3/ITO thin film thermocouples (TFTCs) with alumina protecting layer were fabricated on alumina substrates. The effects of protecting layer on their performance at higher temperature and long term service were investigated accordingly. In2O3 and ITO thin films were prepared by radio frequency magnetron sputtering methods, while the alumina protecting layer was prepared by traditional spin-coating methods. Microstructural and thermoelectric properties of the In2O3/ITO TFTCs with and without alumina (Al2O3) protecting layer were investigated as a function of sintering time from 2 to 10 h at 1250 °C. The results show that, the existence of alumina protecting layer can effectively increase the performance capabilities of thermocouples at high temperatures by inhibiting the volatilization of the thin film. In2O3/ITO TFTCs with protecting layer can work normally over 10 h at 1250 °C while Seebeck coefficient is 131.7 µV/°C. The drift rate can reach 3.05 °C/h, which is much better than those without protecting layer.
Reference Key
liu2018journalmicrostructure Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Yantao Liu;Wei Ren;Peng Shi;Dan Liu;Yijun Zhang;Ming Liu;Qijing Lin;Bian Tian;Zhuangde Jiang;Yantao Liu;Wei Ren;Peng Shi;Dan Liu;Yijun Zhang;Ming Liu;Qijing Lin;Bian Tian;Zhuangde Jiang;
Journal journal of materials science: materials in electronics
Year 2018
DOI
doi:10.1007/s10854-018-0450-x
URL
https://doi.org/10.1007/s10854-018-0450-x
Keywords
characterization and evaluation of materials optical and electronic materials

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