Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

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ID: 116352
2020
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Abstract
The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.
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reznik2020materialslow-temperature Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Rodion R. Reznik;Konstantin P. Kotlyar;Vladislav O. Gridchin;Evgeniy V. Ubyivovk;Vladimir V. Federov;Artem I. Khrebtov;Dmitrii S. Shevchuk;George E. Cirlin;R. Reznik, Rodion;P. Kotlyar, Konstantin;O. Gridchin, Vladislav;V. Ubyivovk, Evgeniy;V. Federov, Vladimir;I. Khrebtov, Artem;S. Shevchuk, Dmitrii;E. Cirlin, George;
Journal Materials (Basel, Switzerland)
Year 2020
DOI
10.3390/ma13163449
URL
https://www.mdpi.com/1996-1944/13/16/3449
Keywords
nanowires silicon gaas self-catalyzed growth molecular-beam epitaxy

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