Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
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ID: 112805
2020
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Abstract
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In0.53Ga0.47As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.
| Reference Key |
motyka2020materialscontactless
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| Authors | Marcin Kurka,Michał Rygała,G. Sęk,Piotr Gutowski,Kamil Pierściński,Marcin Motyka;Marcin Kurka;Michał Rygała;G. Sęk;Piotr Gutowski;Kamil Pierściński;Marcin Motyka; |
| Journal | Materials (Basel, Switzerland) |
| Year | 2020 |
| DOI |
10.3390/ma13143109
|
| URL | |
| Keywords |
gas sensing
mid-infrared
quantum cascade lasers
carrier concentration
berreman effect
gas sensing
mid-infrared
quantum cascade lasers
carrier concentration
berreman effect
National Center for Biotechnology Information
NCBI
NLM
MEDLINE
pubmed abstract
nih
national institutes of health
national library of medicine
pmid:32664660
pmc7412041
doi:10.3390/ma13143109
marcin kurka
michał rygała
marcin motyka
|
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