High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistors
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ID: 111841
2019
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Abstract
Vacuum field effect transistors have been envisioned to hold the promise of replacing solid-state electronics when the ballistic transport of electrons in a nanoscale vacuum can enable significantly high switching speed and stability. However, it remains challenging to obtain high-performance and re …
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| Reference Key |
hd2019nanoscalehigh-performance
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|---|---|
| Authors | Nguyen HD;Kang JS;Li M;Hu Y;; |
| Journal | Nanoscale |
| Year | 2019 |
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