GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices
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2020
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Abstract
Recent results of GaN bulk growth performed in Poland are presented. Two technologies are described in detail: halide vapor phase epitaxy and basic ammonothermal. The processes and their results (crystals and substrates) are demonstrated. Some information about wafering procedures, thus, the way from as-grown crystal to an epi-ready wafer, are shown. Results of other groups in the world are briefly presented as the background for our work.
| Reference Key |
grabianska2020electronicsgan
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| Authors | Karolina Grabianska;Piotr Jaroszynski;Aneta Sidor;Michal Bockowski;Malgorzata Iwinska;Grabianska, Karolina;Jaroszynski, Piotr;Sidor, Aneta;Bockowski, Michal;Iwinska, Malgorzata; |
| Journal | Electronics |
| Year | 2020 |
| DOI |
10.3390/electronics9091342
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