Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

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ID: 110928
2020
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Abstract
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid–solid phase transition and to the complex island–island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.
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tuktamyshev2020nanomaterialsreentrant Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Artur Tuktamyshev;Alexey Fedorov;Sergio Bietti;Shiro Tsukamoto;Roberto Bergamaschini;Francesco Montalenti;Stefano Sanguinetti;Tuktamyshev, Artur;Fedorov, Alexey;Bietti, Sergio;Tsukamoto, Shiro;Bergamaschini, Roberto;Montalenti, Francesco;Sanguinetti, Stefano;
Journal Nanomaterials
Year 2020
DOI
10.3390/nano10081512
URL
https://doi.org/10.3390/nano10081512
Keywords
droplet epitaxy gaas(111)a indium islands rheed liquid-solid transition

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