A Highly Sensitive CMOS Digital Hall Sensor for Low Magnetic Field Applications

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ID: 110577
2012
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Abstract
Integrated CMOS Hall sensors have been widely used to measure magnetic fields. However, they are difficult to work with in a low magnetic field environment due to their low sensitivity and large offset. This paper describes a highly sensitive digital Hall sensor fabricated in 0.18 μm high voltage CMOS technology for low field applications. The sensor consists of a switched cross-shaped Hall plate and a novel signal conditioner. It effectively eliminates offset and low frequency 1/f noise by applying a dynamic quadrature offset cancellation technique. The measured results show the optimal Hall plate achieves a high current related sensitivity of about 310 V/AT. The whole sensor has a remarkable ability to measure a minimum ±2 mT magnetic field and output a digital Hall signal in a wide temperature range from −40 °C to 120 °C.
Reference Key
xu2012sensorsa Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Yue Xu;Hong-Bin Pan;Shu-Zhuan He;Li Li;Xu, Yue;Pan, Hong-Bin;He, Shu-Zhuan;Li, Li;
Journal sensors
Year 2012
DOI
10.3390/s120202162
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