Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors (npj Computational Materials, (2020), 6, 1, (24), 10.1038/s41524-020-0293-x)

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2020
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ueda2020publishernpj Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Ueda, A.
Journal npj computational materials
Year 2020
DOI
10.1038/s41524-020-0314-9
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