Large-area patterning of coinage-metal thin films using decal transfer lithography.

Clicks: 250
ID: 103291
2005
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Ranked #47 of 87 articles by views in Langmuir : the ACS journal of surfaces and colloids

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Abstract
We describe two new procedures that appear to hold significant promise as means for patterning thin-film microstructures of the coinage metals (Cu, Ag, Au). A feature central to both is the modification of their surfaces to promote the adhesive transfer of PDMS thin-film microstructures, a material suitable for use as resist layers in large-area patterning, using Decal Transfer Lithography (DTL). The present work provides a significant extension of the capabilities of DTL patterning, providing general protocols that can be used to transfer decal resists to essentially any substrate surface. The first method involves the functionalization of a surface, specifically those of gold and silver films with a thiol-terminated silane coupling agent, (mercaptopropyl)trimethoxysilane. This self-assembled monolayer, when hydrolyzed to its silanol form, provides a robust adhesion-promoting layer suitable for use in DTL patterning. The second method exploits the surface chemistry provided by the deposition of a nanoscale silicon dioxide thin-film capping layer using e-beam evaporation. This procedure provides an exceptional method for patterning large-area, thin-film microstructures of Cu-one compatible with micrometer-scale design rules-that are essentially defect free. Both surface modification strategies enable high-quality poly(dimethylsiloxane) decal transfers, and as the current work shows, these structures are suitable for large-area micrometer-sized patterning of gold, silver, and copper thin films via both wet-etching and lift-off procedures.
Reference Key
childs2005largearealangmuir Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Childs, William R;Nuzzo, Ralph G;
Journal Langmuir : the ACS journal of surfaces and colloids
Year 2005
DOI
DOI not found
URL URL not found
Keywords
silicon nanowires field effect transistor diameter modulation dielectrophorestic alignment transfer method

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