Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size.

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ID: 103290
2015
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Abstract
The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NW's diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V·s and the threshold voltage moved from -7.17 to 0 V because phonon-electron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.
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lee2015electricalacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lee, Sang Hoon;Lee, Tae Il;Lee, Su Jeong;Lee, Sang Myung;Yun, Ilgu;Myoung, Jae Min;
Journal ACS applied materials & interfaces
Year 2015
DOI
10.1021/am507478q
URL
Keywords
silicon nanowires field effect transistor diameter modulation dielectrophorestic alignment transfer method

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