A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core-Insulator.

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ID: 101046
2020
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Abstract
Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core-Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.
Reference Key
zhang2020amicromachines Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Zhang, Yannan;Han, Ke;Li, And Jiawei;
Journal micromachines
Year 2020
DOI
E223
URL
Keywords
nanowire cmos gaa core-insulator field effect transistor gate-all-around

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