ultraviolet photosensors based on zns thin films
Clicks: 110
ID: 193012
2009
High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.
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n.2009tekhnologiyaultraviolet
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| Authors | ;Bobrenko Yu. N.;Yaroshenko N. V.;Sheremetova G. I.;Semikina T. V.;Atdaev B. S. |
| Journal | premiere educandum |
| Year | 2009 |
| DOI | DOI not found |
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