capability study of ti, cr, w, ta and pt as seed layers for electrodeposited platinum films on γ-al2o3 for high temperature and harsh environment applications

Abstract

High temperature surface acoustic wave sensors based on radio frequency identification technology require adequate antennas of high efficiency and thermal stability for the signal transmission. Platinum is well known and frequently used as a material of choice for high temperature and harsh environment applications because of the high melting point and its chemical stability. Therefore, one way to realize high temperature stable antennas is the combination of a Pt metallization on an Al 2 O 3 substrate. As a cost-effective technique, the Pt film is deposited via electrochemical deposition. For this growth procedure, a pre-deposited metallization on the Al 2 O 3 layer is required. This paper analyzes the influence of various seed layers (Ta, Ti, W, Cr, Pt) on the morphology, stability and electrical properties of the electrochemically-grown Pt thick film after heat treatments up to 1000 ∘ C in air. We find an oxidation of all adhesion layers except for Pt, for which the best electrical properties were measured. Although significant areas of the films delaminate from the substrate, individual anchor structures retain a stable connection between the Pt layer and the rough Al 2 O 3 substrate.