Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory

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ID: 94707
2020
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park2020solgeljournal Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Park, S.
Journal journal of alloys and compounds
Year 2020
DOI 10.1016/j.jallcom.2020.154086
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