Analysis of Channel Area Fluctuation Effects of Gate-All-Around Tunnel Field-Effect Transistor.
Clicks: 237
ID: 90588
2020
In this manuscript, channel area fluctuation (CAF) effects on turn-on voltage () and subthreshold swing (SS) in gate-all-around (GAA) nanowire (NW) tunnel field-effect transistor (TFET) with multi-bridge-channel (MBC) have been investigated for the first time. These variations occur because oblique etching slope makes various elliptical-shaped channels in MBC-TFET. Since TFET is promising candidates to succeed metal-oxide-semiconductor FETs (MOSFET), these variation effects have been compared to MOSFET. Furthermore, Ge homojunction TFET, one of the solutions to increase on-state current in TFET and improve SS also has been simulated using technology computer-aided design (TCAD) simulation. The results would be worth reference for future study about GAA NW TFETs.
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| Authors | Kang, Seok Jung;Park, Jeong-Uk;Rim, Kyung Jin;Kim, Yoon;Kim, Jang Hyun;Kim, Garam;Kim, Sangwan; |
| Journal | Journal of nanoscience and nanotechnology |
| Year | 2020 |
| DOI | 10.1166/jnn.2020.17792 |
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