Improvement of transconductance and cut-off frequency in In 0.1 Ga 0.9 N back-barrier-based double-channel Al 0.3 Ga 0.7 N / GaN high electron mobility transistor by enhancing the drain source contact length ratio
Clicks: 159
ID: 78411
2020
| Reference Key |
mohapatra2020improvementpramana
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | Mohapatra, R. |
| Journal | pramana - journal of physics |
| Year | 2020 |
| DOI | 10.1007/s12043-019-1866-4 |
| URL | |
| Keywords | Keywords not found |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.