Effect of Carbon Addition and Mixture Method on the Microstructure and Mechanical Properties of Silicon Carbide
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ID: 118436
2020
High dense (>99% density) SiC ceramics were produced with addition of C and B4C by spark plasma sintering method at 1950 °C under 50 MPa applied pressure for 5 min. To remove the oxygen from the SiC, it was essential to add C. Two different mixture method were used, dry mixing (specktromill) and wet mixing (ball milling). The effect of different levels of carbon additive and mixture method on density, microstructure, elastic modulus, polytype of SiC, Vickers hardness, and fracture toughness were examined. Precisely, 1.5 wt.% C addition was sufficient to remove oxide layer from SiC and improve the properties of dense SiC ceramics. The highest hardness and elastic modulus values were 27.96 and 450 GPa, respectively. Results showed that the 4H polytype caused large elongated grains, while the 6H polytype caused small coaxial grains. It has been observed that it was important to remove oxygen to achieve high density and improve properties of SiC. Other key factor was to include sufficient amount of carbon to remove oxide layer. The results showed that excess carbon prevented to achieve high density with high elastic modulus and hardness.
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yaşar2020materialseffect
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| Authors | Zeynep Aygüzer Yaşar;Richard A. Haber;Yaşar, Zeynep Aygüzer;Haber, Richard A.; |
| Journal | materials |
| Year | 2020 |
| DOI | 10.3390/ma13173768 |
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